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| TLZ... Vishay Semiconductors Z-Diodes Features D Very sharp reverse characteristic D Low reverse current level D Available with tighter tolerances D Very high stability D Low noise D Silicon Epitaxial Planar D High reliability Applications Voltage stabilization Order Instruction Type TLZ2V4 Ordering Code TLZ2V4-GS08 TLZ2V4-GS18 Remarks Tape and Reel (2.500 pcs) Tape and Reel (10.000 pcs) Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA C C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50 mmx50 mmx1.6 mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Document Number 85635 Rev. A4, 08-JAug-02 www.vishay.com 1 (9) TLZ... Vishay Semiconductors Type VZmin VZmax. (V) TLZ2V4 2.330 TLZ2V4A 2.330 TLZ2V4B 2.430 TLZ2V7 2.540 TLZ2V7A 2.540 TLZ2V7B 2.690 TLZ3V0 2.850 TLZ3V0A 2.850 TLZ3V0B 3.010 TLZ3V3 3.160 TLZ3V3A 3.160 TLZ3V3B 3.320 TLZ3V6 3.455 TLZ3V6A 3.455 TLZ3V6B 3.600 TLZ3V9 TLZ3V9A TLZ3V9B TLZ4V3 TLZ4V3A TLZ4V3B TLZ4V3C TLZ4V7 TLZ4V7A TLZ4V7B TLZ4V7C TLZ5V1 TLZ5V1A TLZ5V1B TLZ5V1C TLZ5V6 TLZ5V6A TLZ5V6B TLZ5V6C 3.74 3.74 3.89 4.04 4.04 4.17 4.30 4.44 4.44 4.55 4.68 4.81 4.81 4.94 5.09 5.28 5.28 5.45 5.61 (V) 2.630 2.520 2.630 2.910 2.750 2.910 3.220 3.070 3.220 3.530 3.380 3.530 3.845 3.695 3.845 4.16 4.01 4.16 4.57 4.29 4.43 4.57 4.93 4.68 4.80 4.93 5.37 5.07 5.20 5.37 5.91 5.55 5.73 5.91 at IZ (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 ZZmax (W) 100 100 100 100 100 100 80 80 80 70 70 70 60 60 60 50 50 50 40 40 40 40 25 25 25 25 20 20 20 20 13 13 13 13 at IZ (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 ZZKmax. (W) 2000 2000 2000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 900 900 900 900 800 800 800 800 500 500 500 500 at IZ (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 IRmax. (mA) 120 120 120 100 100 100 50 50 50 20 20 20 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 at VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 2.5 2.5 2.5 2.5 IRmax2) (mA) 70 70 70 70 70 70 70 70 20 20 20 20 6 6 6 3 3 3 3 3 3 3 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 at VR2) (V) 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Body Marking 2V4 2A4 2B4 2V7 2A7 2B7 3V0 3A0 3B0 3V3 3A3 3B3 3V6 3A6 3B6 3V9 3A9 3B9 4V3 4A3 4B3 4C3 4V7 4A7 4B7 4C7 5V1 5A1 5B1 5C1 5V6 5A6 5B6 5C6 www.vishay.com 2 (9) Document Number 85635 Rev. A4, 08-Aug-02 TLZ... Vishay Semiconductors Type VZmin VZmax. . at IZ (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 ZZmax . at IZ (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 ZZKmax. (W) 300 300 300 300 150 150 150 150 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 110 110 110 110 110 110 110 110 at IZ (mA) 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IRmax. (mA) 5 5 5 5 2 2 2 2 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 at VR (V) 3.0 3.0 3.0 3.0 3.5 3.5 3.5 3.5 4.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 6.0 6.0 6.0 6.0 7.0 7.0 7.0 7.0 7.0 8.0 8.0 8.0 8.0 9.0 9.0 9.0 9.0 10 10 10 10 IRmax2) (mA) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 - - - - - - - - - - - - - - - - - - - - - at VR2) (V) 1.0 1.0 2.0 2.0 2.0 2.0 3.0 3.0 3.0 3.0 4.0 4.0 4.0 4.0 4.0 4.0 - - - - - - - - - - - - - - - - - - - - - (V) TLZ6V2 TLZ6V2A TLZ6V2B TLZ6V2C TLZ6V8 TLZ6V8A TLZ6V8B TLZ6V8C TLZ7V5 TLZ7V5A TLZ7V5B TLZ7V5C TLZ8V2 TLZ8V2A TLZ8V2B TLZ8V2C TLZ9V1 TLZ9V1A TLZ9V1B TLZ9V1C TLZ10 TLZ10A TLZ10B TLZ10C TLZ10D TLZ11 TLZ11A TLZ11B TLZ11C TLZ12 TLZ12A TLZ12B TLZ12C TLZ13 TLZ13A TLZ13B TLZ13C 5.78 5.78 5.96 6.12 6.29 6.29 6.49 6.66 6.85 6.85 7.07 7.29 7.53 7.53 7.78 8.03 8.29 8.29 8.57 8.83 9.12 9.12 9.41 9.70 9.94 10.18 10.18 10.50 10.82 11.13 11.13 11.44 11.74 12.11 12.11 12.55 12.99 (V) 6.44 6.09 6.27 6.44 7.01 6.63 6.83 7.01 7.67 7.22 7.45 7.67 8.45 7.92 8.19 8.45 9.30 8.73 9.01 9.30 10.44 9.59 9.90 10.20 10.44 11.38 10.71 11.05 11.38 12.35 11.71 12.03 12.35 13.66 12.75 13.21 13.66 (W) 10 10 10 10 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 10 10 10 10 12 12 12 12 14 14 14 14 Body Marking 6V2 6A2 6B2 6C2 6V8 6A8 6B8 6C8 7V5 7A5 7B5 7C5 8V2 8A2 8B2 8C2 9V1 9A1 9B1 9C1 10 10A 10B 10C 10D 11 11A 11B 11C 12 12A 12B 12C 13 13A 13B 13C Document Number 85635 Rev. A4, 08-JAug-02 www.vishay.com 3 (9) TLZ... Vishay Semiconductors Type VZmin VZmax. . at IZ (mA) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 ZZmax . at IZ (mA) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 ZZKmax. (W) 110 110 110 110 150 150 150 150 150 150 150 150 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 250 250 250 250 250 250 250 250 250 250 at IZ (mA) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IRmax. (mA) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 at VR (V) 11 11 11 11 12 12 12 12 13 13 13 13 15 15 15 15 15 17 17 17 17 17 19 19 19 19 19 21 21 21 21 21 23 23 23 23 23 IRmax2) (mA) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - at VR2) (V) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - (V) TLZ15 TLZ15A TLZ15B TLZ15C TLZ16 TLZ16A TLZ16B TLZ16C TLZ18 TLZ18A TLZ18B TLZ18C TLZ20 TLZ20A TLZ20B TLZ20C TLZ20D TLZ22 TLZ22A TLZ22B TLZ22C TLZ22D TLZ24 TLZ24A TLZ24B TLZ24C TLZ24D TLZ27 TLZ27A TLZ27B TLZ27C TLZ27D TLZ30 TLZ30A TLZ30B TLZ30C TLZ30D 13.44 13.44 13.89 14.35 14.80 14.80 15.25 15.69 16.22 16.22 16.82 17.42 18.02 18.02 18.63 19.23 19.72 20.15 20.15 20.64 21.08 21.52 22.05 22.05 22.61 23.12 23.63 24.26 24.26 24.97 25.63 26.29 26.99 26.99 27.70 28.36 29.02 (V) 15.09 14.13 14.62 15.09 16.51 15.57 16.04 16.51 18.33 17.06 17.70 18.33 20.72 18.96 19.59 20.22 20.72 22.63 21.20 21.71 22.17 22.63 24.85 23.18 23.77 24.31 24.85 27.64 25.52 26.26 26.95 27.64 30.51 28.39 29.13 29.82 30.51 (W) 16 16 16 16 18 18 18 18 23 23 23 23 28 28 28 28 28 30 30 30 30 30 35 35 35 35 35 45 45 45 45 45 55 55 55 55 55 Body Marking 15 15A 15B 15C 16 16A 16B 16C 18 18A 18B 18C 20 20A 20B 20C 20D 22 22A 22B 22C 22D 24 24A 24B 24C 24D 27 27A 27B 27C 27D 30 30A 30B 30C 30D www.vishay.com 4 (9) Document Number 85635 Rev. A4, 08-Aug-02 TLZ... Vishay Semiconductors Type VZmin VZmax. . at IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 ZZmax . at IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 ZZKmax. (W) 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 - - - - at IZ (mA) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 - - - - IRmax. (mA) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 at VR (V) 25 25 25 25 25 27 27 27 27 27 30 30 30 30 30 30 30 30 33 36 39 43 IRmax2) (mA) - - - - - - - - - - - - - - - - - - - - - - at VR2) (V) - - - - - - - - - - - - - - - - - - - - - - (V) TLZ33 TLZ33A TLZ33B TLZ33C TLZ33D TLZ36 TLZ36A TLZ36B TLZ36C TLZ36D TLZ39 TLZ39A TLZ39B TLZ39C TLZ39D TLZ39E TLZ39F TLZ39G TLZ43 TLZ47 TLZ51 TLZ56 29.68 29.68 30.32 30.90 31.49 32.14 32.14 32.79 33.40 34.01 34.68 34.68 35.36 36.00 36.63 37.36 38.14 38.94 40.00 44.00 48.00 53.00 (V) 33.11 31.22 31.88 32.50 33.11 35.77 33.79 34.49 35.13 35.77 40.80 36.47 37.19 37.85 38.52 39.29 40.11 40.80 45.00 49.00 54.00 60.00 (W) 65 65 65 65 65 75 75 75 75 75 85 85 85 85 85 85 85 85 90 90 100 100 Body Marking 33 33A 33B 33C 33D 36 36A 36B 36C 36D 39 39A 39B 39C 39D 39E 39F 39G 43 47 51 56 2) Additional measurement Please note: Additional measurement of voltage group 9V1 to 75 IR at 95 % VZmin = < 35 nA at Tj 25 _C Document Number 85635 Rev. A4, 08-JAug-02 www.vishay.com 5 (9) TLZ... Vishay Semiconductors Characteristics (Tj = 25_C unless otherwise specified) 600 Ptot - Total Power Dissipation ( mW ) 500 400 300 200 100 0 0 95 9602 TK VZ - Temperature Coefficient of VZ ( 10 -4/K ) 15 10 5 IZ=5mA 0 -5 0 10 20 30 40 50 VZ - Z-Voltage ( V ) 40 80 120 160 200 Tamb - Ambient Temperature ( C ) 95 9600 Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 DV - Voltage Change ( mV ) Z Figure 4. Temperature Coefficient of Vz vs. Z-Voltage 200 CD - Diode Capacitance ( pF ) Tj=25C 100 150 VR=2V 100 Tj=25C IZ=5mA 10 50 1 0 95 9598 0 5 10 15 20 25 95 9601 0 5 10 15 20 25 VZ - Z-Voltage ( V ) VZ - Z-Voltage ( V ) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25C 1.3 VZtn - Relative Voltage Change VZtn=VZt/VZ(25C) IF - Forward Current ( mA ) 1.2 TKVZ=10 10 -4/K 8 6 10 -4/K 10 -4/K 10 -4/K 10 -4/K Figure 5. Diode Capacitance vs. Z-Voltage 100 10 Tj=25C 1 1.1 4 2 1.0 0.9 0.8 -60 0 -2 10 -4/K -4 10 -4/K 0.1 0.01 0.001 0 60 120 180 240 95 9605 0 0.2 0.4 0.6 0.8 1.0 95 9599 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 3. Typical Change of Working Voltage vs. Junction Temperature Figure 6. Forward Current vs. Forward Voltage www.vishay.com 6 (9) Document Number 85635 Rev. A4, 08-Aug-02 TLZ... Vishay Semiconductors 100 r Z - Differential Z-Resistance ( W) 1000 IZ - Z-Current ( mA ) 80 Ptot=500mW Tamb=25C 60 IZ=1mA 100 5mA 10 10mA 40 20 0 0 4 8 12 16 20 1 0 95 9606 Tj=25C 5 10 15 20 25 95 9604 VZ - Z-Voltage ( V ) VZ - Z-Voltage ( V ) Figure 7. Z-Current vs. Z-Voltage 50 Ptot=500mW Tamb=25C Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current ( mA ) 40 30 20 10 0 15 20 25 30 35 95 9607 VZ - Z-Voltage ( V ) Figure 8. Z-Current vs. Z-Voltage Zthp - Thermal Resistance for Pulse Cond. (K/W) 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 10-1 100 101 tp - Pulse Length ( ms ) tp/T=0.02 iZM=(-VZ+(VZ2+4rzjDT/Zthp)1/2)/(2rzj) 102 tp/T=0.01 RthJA=300K/W DT=Tjmax-Tamb 95 9603 Figure 10. Thermal Response Document Number 85635 Rev. A4, 08-JAug-02 www.vishay.com 7 (9) TLZ... Vishay Semiconductors Dimensions in mm 96 12070 Marking Voltage Group TLZ2V4A TLZ2V4 2A4 2A4 2A4 2A4 2V4 2V4 2V4 2V4 Remark: The Zener voltage TLZ2V4 or Zener voltage group TLZ2V4A is printet with max 3 digits 3 times on the surface. The marking should be readable at minimum 2 times. The third print is allowed to be incomplete due to tolerances in Diameter of the glassbody. www.vishay.com 8 (9) Document Number 85635 Rev. A4, 08-Aug-02 TLZ... Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85635 Rev. A4, 08-JAug-02 www.vishay.com 9 (9) |
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